Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Juntao Li0
Peng Xu0
Kangguo Cheng0
Date of Patent
August 29, 2017
0Patent Application Number
152742690
Date Filed
September 23, 2016
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device including an nFET device and pFET device adjacent one another. The semiconductor device includes a shallow trench isolator (STI), a gate and a substrate having fins extending upwardly through the STI. The fins include: nFET fins disposed in an nFET epi well formed in the STI and pFET fins disposed in a pFET epi well formed in the STI, a top the STI being above a top of the fins.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
