US Patent 9748245 Multiple finFET formation with epitaxy separation
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Patent abstract
A semiconductor device including an nFET device and pFET device adjacent one another. The semiconductor device includes a shallow trench isolator (STI), a gate and a substrate having fins extending upwardly through the STI. The fins include: nFET fins disposed in an nFET epi well formed in the STI and pFET fins disposed in a pFET epi well formed in the STI, a top the STI being above a top of the fins.
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Patent Inventor Names
Juntao Li0
Kangguo Cheng0
Peng Xu0
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US Patent 09748245 Multiple finFET formation with epitaxy separation US Patent 9748245 Multiple finFET formation with epitaxy separation
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Patent Number
097482450
Patent Number
97482450
Edits on 27 Mar, 2023
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Patent Jurisdiction
Patent Number
097482450
Date of Patent
August 29, 2017
0Patent Application Number
152742690
Date Filed
September 23, 2016
0Patent Primary Examiner
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US Patent 09748245 Multiple finFET formation with epitaxy separation
Infobox
Is a
Patent jurisdiction
Patent number
09748245
Date of patent
August 29, 2017
Patent application number
15274269
Date Filed
September 23, 2016
Patent primary examiner
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