Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tsu-Hsiu Perng0
Yu-Lien Huang0
Clement Hsingjen Wann0
Ming-Huan Tsai0
Tung Ying Lee0
Date of Patent
October 3, 2017
Patent Application Number
14219869
Date Filed
March 19, 2014
Patent Citations Received
Patent Primary Examiner
Patent abstract
An embodiment fin field effect transistor (finFET) includes a fin extending upwards from a semiconductor substrate and a gate stack. The fin includes a channel region. The gate stack is disposed over and covers sidewalls of the channel region. The channel region includes at least two different semiconductor materials.
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