Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 7, 2017
Patent Application Number
15266092
Date Filed
September 15, 2016
Patent Citations Received
Patent Primary Examiner
Patent abstract
FinFET structures include a stacked fin architecture formed on a semiconductor substrate. The stacked fin architecture includes a template semiconductor layer disposed on the substrate beneath the semiconductor fins that is used as an etch stop during fin formation and to form a laterally-extending epitaxial layer for contacting the bottom tier of fins within the stack.
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