US Patent 9812575 Contact formation for stacked FinFETs
All edits
Edits on 19 Sep, 2024
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Patent Citations Received
Edits on 8 May, 2024
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Edits on 6 Dec, 2023
Golden AI
Edits made to:
Article (+387 characters)
Article
Patent abstract
FinFET structures include a stacked fin architecture formed on a semiconductor substrate. The stacked fin architecture includes a template semiconductor layer disposed on the substrate beneath the semiconductor fins that is used as an etch stop during fin formation and to form a laterally-extending epitaxial layer for contacting the bottom tier of fins within the stack.
Edits on 22 May, 2023
Golden AI
Edits made to:
Infobox (+1/-1 properties)
US Patent 09812575 Contact formation for stacked FinFETs US Patent 9812575 Contact formation for stacked FinFETs
Infobox
Patent Number
0981257500
Patent Number
981257500
Edits on 5 Apr, 2023
Golden AI
Infobox
Is a
Patent Jurisdiction
Patent Number
098125750
Date of Patent
November 7, 2017
0Patent Application Number
152660920
Date Filed
September 15, 2016
0Patent Primary Examiner
Edits on 24 Sep, 2022
Golden AI
Infobox
Is a
Patent Jurisdiction
Patent Number
098125750
Date of Patent
November 7, 2017
0Patent Application Number
152660920
Date Filed
September 15, 2016
0Patent Primary Examiner
Edits on 15 Jan, 2022
Golden AI
Edits made to:
Infobox (+7 properties)
US Patent 09812575 Contact formation for stacked FinFETs
Infobox
Is a
Patent jurisdiction
Patent number
09812575
Date of patent
November 7, 2017
Patent application number
15266092
Date Filed
September 15, 2016
Patent primary examiner
Find more entities like US Patent 9812575 Contact formation for stacked FinFETs
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
