Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Wai-Yi Lien0
Chih-Hao Wang0
Ching-Wei Tsai0
Kuo-Cheng Ching0
Ying-Keung Leung0
Carlos H. Diaz0
Date of Patent
November 14, 2017
Patent Application Number
14788161
Date Filed
June 30, 2015
Patent Citations Received
...
Patent Primary Examiner
Patent abstract
A method of semiconductor device fabrication is described that includes forming a fin extending from a substrate and having a source/drain region and a channel region. The fin includes a first epitaxial layer having a first composition and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a second composition. The second epitaxial layer is removed from the source/drain region of the fin to form a gap. The gap is filled with a dielectric material. Another epitaxial material is formed on at least two surfaces of the first epitaxial layer to form a source/drain feature.
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