Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chia-Wei Chen0
Shan-Mei Liao0
Jian-Hao Chen0
Cheng-Hao Hou0
Tsung-Da Lin0
Huang-Chin Chen0
Yen-Ming Chen0
Shih-Hao Lin0
...
Date of Patent
August 27, 2024
0Patent Application Number
174614990
Date Filed
August 30, 2021
0Patent Citations
...
Patent Primary Examiner
Patent abstract
A device includes a semiconductor substrate, a fin structure on the semiconductor substrate, a gate structure on the fin structure, and a pair of source/drain features on both sides of the gate structure. The gate structure includes an interfacial layer on the fin structure, a gate dielectric layer on the interfacial layer, and a gate electrode layer of a conductive material on and directly contacting the gate dielectric layer. The gate dielectric layer includes nitrogen element.
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