US Patent 9822009 Method for producing graphene
Patent 9822009 was granted and assigned to Tokyo Electron on November, 2017 by the United States Patent and Trademark Office.
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Patent abstract
A graphene producing method which is capable of increasing a size of each domain of graphene. A plasma CVD film formation device that activates a catalyst metal layer formed on a wafer; modifies the same into an activated catalyst metal layer; decomposes a C2H4 gas as a low reactivity carbon-containing gas by plasma in a space that opposes the wafer; and decomposes a C2H2 gas as a high reactivity carbon-containing gas by heat in the space.
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Patent Inventor Names
Daisuke Nishide0
Munehito Kagaya0
Takashi Matsumoto0
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Patent Citations Received
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US Patent 09822009 Method for producing graphene US Patent 9822009 Method for producing graphene
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Patent Number
098220090
Patent Number
98220090
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Infobox
Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
098220090
Date of Patent
November 21, 2017
0Patent Application Number
149476590
Date Filed
November 20, 2015
0Patent Primary Examiner
Edits on 15 Jan, 2022
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US Patent 09822009 Method for producing graphene
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
09822009
Date of patent
November 21, 2017
Patent application number
14947659
Date Filed
November 20, 2015
Patent primary examiner
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