US Patent 9825157 Heterojunction bipolar transistor with stress component
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Patent abstract
The present disclosure relates to semiconductor structures and, more particularly, to a heterojunction bipolar transistor with a stress component and methods of manufacture. The heterojunction bipolar transistor includes a collector region, an emitter region and a base region. Stress material is formed within a trench of a substrate and surrounding at least the collector region and the base region.
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Patent Inventor Names
Anthony K. Stamper0
Renata A. Camillo-Castillo0
Vibhor Jain0
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US Patent 09825157 Heterojunction bipolar transistor with stress component US Patent 9825157 Heterojunction bipolar transistor with stress component
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Patent Number
098251570
Patent Number
98251570
Edits on 27 Apr, 2023
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Is a
Patent Jurisdiction
Patent Number
098251570
Date of Patent
November 21, 2017
0Patent Application Number
151969200
Date Filed
June 29, 2016
0Patent Primary Examiner
Edits on 15 Jan, 2022
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US Patent 09825157 Heterojunction bipolar transistor with stress component
Infobox
Is a
Patent jurisdiction
Patent number
09825157
Date of patent
November 21, 2017
Patent application number
15196920
Date Filed
June 29, 2016
Patent primary examiner
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