US Patent 9837312 Atomic layer etching for enhanced bottom-up feature fill
Patent 9837312 was granted and assigned to Lam Research on December, 2017 by the United States Patent and Trademark Office.
All edits
Edits on 22 Feb, 2024
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Edits on 6 Dec, 2023
Golden AI
Edits made to:
Article (+232 characters)
Article
Patent abstract
Atomic layer etching (ALE) enables effective filling of small feature structures on semiconductor and other substrates, such as contacts and vias, by bottom-up fill, for example electroless deposition (ELD) of cobalt.
Edits on 1 Oct, 2023
Golden AI
Edits made to:
Infobox (+7 properties)
Infobox
Patent Inventor Names
Artur Kolics0
Jengyi Yu0
Keren Jacobs Kanarik0
Novy Tjokro0
Praveen Nalla0
Samantha Tan0
Taeseung Kim0
Edits on 24 May, 2023
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Patent Citations Received
Edits on 23 May, 2023
Golden AI
Edits made to:
Infobox (+1/-1 properties)
US Patent 09837312 Atomic layer etching for enhanced bottom-up feature fill US Patent 9837312 Atomic layer etching for enhanced bottom-up feature fill
Infobox
Patent Number
098373120
Patent Number
98373120
Edits on 5 Oct, 2022
Golden AI
Infobox
Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
098373120
Date of Patent
December 5, 2017
0Patent Application Number
152864210
Date Filed
October 5, 2016
0Patent Primary Examiner
Edits on 16 Jan, 2022
Golden AI
Edits made to:
Infobox (+9 properties)
US Patent 09837312 Atomic layer etching for enhanced bottom-up feature fill
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
09837312
Date of patent
December 5, 2017
Patent application number
15286421
Date Filed
October 5, 2016
Patent primary examiner
Find more entities like US Patent 9837312 Atomic layer etching for enhanced bottom-up feature fill
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
