Is a
Patent attributes
Patent Applicant
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hak-Yoon Ahn0
Young-Mook Oh0
Baik-Min Sung0
Chong-Kwang Chang0
Gi-Gwan Park0
Jung-Gun You0
Date of Patent
January 9, 2018
0Patent Application Number
152921440
Date Filed
October 13, 2016
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device includes a gate structure on a substrate, a source/drain layer on a portion of the substrate adjacent the gate structure, a first contact plug contacting an upper surface of the source/drain layer, and a second contact plug contacting upper surfaces of the gate structure and the first contact plug. A bottom surface of the second contact plug has a first portion not contacting the upper surface of the first contact plug, and the first portion is higher than the upper surface of the gate structure.
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