US Patent 11837615 Image sensor with increased gate pattern width

An image sensor may include a substrate having first and second surfaces opposite to each other and including unit pixel regions and impurity regions near the first surface, a device isolation pattern provided on the first surface to define the impurity regions, and an interconnection layer including an insulating layer covering the first surface of the substrate, interconnection lines on the insulating layer, and a penetration structure penetrating the insulating layer. The penetration structure may include a first pattern connected to one of the impurity regions and in contact with at least a portion of the device isolation pattern, a second pattern provided on the first pattern and in contact with the interconnection lines, and a third pattern provided between the first and second patterns. A top surface of the first pattern may be higher than that of the device isolation pattern.