Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 13, 2018
Patent Application Number
14579595
Date Filed
December 22, 2014
Patent Citations Received
Patent Primary Examiner
Patent abstract
The method comprises forming a first silicon nitride film covering a pixel circuit section by thermal CVD; forming an opening in the first silicon nitride film by removing a first portion of the first silicon nitride film while remaining a second portion of the first silicon nitride film; forming a second silicon nitride film covering the opening by plasma CVD; forming an insulating film covering the first silicon nitride film and the second silicon nitride film and covering a peripheral transistor in the peripheral circuit section; and forming a contact plug passing through the insulating film and being in contact with the peripheral transistor.
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