Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 16, 2018
Patent Application Number
14341568
Date Filed
July 25, 2014
Patent Citations Received
Patent Primary Examiner
Patent abstract
In a particular embodiment, a method includes forming a first spacer structure on a dummy gate of a semiconductor device and forming a sacrificial spacer on the first spacer structure. The method also includes etching a structure of the semiconductor device to create an opening, removing the sacrificial spacer via the opening, and depositing a material to close to define a gap.
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