US Patent 9871121 Semiconductor device having a gap defined therein
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Patent abstract
In a particular embodiment, a method includes forming a first spacer structure on a dummy gate of a semiconductor device and forming a sacrificial spacer on the first spacer structure. The method also includes etching a structure of the semiconductor device to create an opening, removing the sacrificial spacer via the opening, and depositing a material to close to define a gap.
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US Patent 09871121 Semiconductor device having a gap defined therein US Patent 9871121 Semiconductor device having a gap defined therein
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Patent Number
0987112100
Patent Number
987112100
Edits on 26 Apr, 2023
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Patent Jurisdiction
Patent Number
098711210
Date of Patent
January 16, 2018
0Patent Application Number
143415680
Date Filed
July 25, 2014
0Patent Primary Examiner
Edits on 25 Sep, 2022
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Infobox
Is a
Patent Jurisdiction
Patent Number
098711210
Date of Patent
January 16, 2018
0Patent Application Number
143415680
Date Filed
July 25, 2014
0Patent Primary Examiner
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US Patent 09871121 Semiconductor device having a gap defined therein
Infobox
Is a
Patent jurisdiction
Patent number
09871121
Date of patent
January 16, 2018
Patent application number
14341568
Date Filed
July 25, 2014
Patent primary examiner
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