Log in
Sign up
Golden has been acquired by ComplyAdvantage.Read about it here ⟶
‌

US Patent 9882022 Method for manufacturing transistor with SiCN/SiOCN multilayer spacer

Patent 9882022 was granted and assigned to United Microelectronics Corporation on January, 2018 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributorsActivity
Patent abstract

A semiconductor device and a method for manufacturing the same are provided in the present invention. The semiconductor device includes a substrate, a gate structure on the substrate and two spacers on both sidewalls of the gate structure. Each spacer comprises an inner first spacer portion made of SiCN and an outer second spacer portion made of SiOCN.

Timeline

No Timeline data yet.

Further Resources

Title
Author
Link
Type
Date
No Further Resources data yet.

References

Find more entities like US Patent 9882022 Method for manufacturing transistor with SiCN/SiOCN multilayer spacer

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
Open Query Tool
Access by API
Golden Query Tool
Golden logo