US Patent 9893070 Semiconductor device and fabrication method therefor
Patent 9893070 was granted and assigned to Taiwan Semiconductor Manufacturing Company on February, 2018 by the United States Patent and Trademark Office.
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Patent abstract
A method of fabricating a semiconductor device. The method includes forming a dummy structure over a substrate, forming conductive features on opposite sides of the dummy gate structure, removing the dummy structure and a portion of the substrate beneath the dummy gate structure to form a trench, and filling the trench with a dielectric material.
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Patent Inventor Names
Chin-Shan Wang0
Shun-Yi Lee0
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US Patent 09893070 Semiconductor device and fabrication method therefor US Patent 9893070 Semiconductor device and fabrication method therefor
Infobox
Patent Number
098930700
Patent Number
98930700
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Infobox
Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
098930700
Date of Patent
February 13, 2018
0Patent Application Number
151789030
Date Filed
June 10, 2016
0Patent Primary Examiner
Edits on 18 Jan, 2022
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US Patent 09893070 Semiconductor device and fabrication method therefor
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
09893070
Date of patent
February 13, 2018
Patent application number
15178903
Date Filed
June 10, 2016
Patent primary examiner
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