US Patent 9978770 Semiconductor memory device

According to an embodiment, a semiconductor memory device comprises a substrate, a plurality of first conductive layers, a memory columnar body, a first semiconductor layer, a second semiconductor layer and a contact. The plurality of first conductive layers are stacked upwardly of the substrate. The memory columnar body extends in a first direction intersecting an upper surface of the substrate and a side surface of the memory columnar body is covered by the first conductive layers. The first semiconductor layer is connected to a lower end of the memory columnar body and extends in a second direction intersecting the first direction. The second conductive layer is provided between the first semiconductor layer and the first conductive layers. The second conductive layer is connected to the memory columnar body and extending in the second direction. The contact is connected to the second conductive layer and extends in the first direction.