Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tatsumi Mizutani0
Takafumi Tokunaga0
Hideyuki Kazumi0
Sadayuki Okudaira0
Ken Yoshioka0
Kazutami Tago0
Date of Patent
October 23, 2007
0Patent Application Number
100941570
Date Filed
March 8, 2002
0Patent Primary Examiner
Patent abstract
To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.
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