Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tomohiko Shibata0
Yuji Hori0
Mitsuhiro Tanaka0
Osamu Oda0
Date of Patent
March 25, 2008
Patent Application Number
11083331
Date Filed
March 17, 2005
Patent Primary Examiner
Patent abstract
In a semiconductor light-emitting element, an underlayer is composed of a high crystallinity AlN layer having a FWHM in X-ray rocking curve of 90 seconds or below, and a first cladding layer is composed of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer.
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