US Patent RE40163 Semiconductor light-emitting element
Patent RE40163 was granted and assigned to NGK Insulators on March, 2008 by the United States Patent and Trademark Office.
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Patent Inventor Names
Mitsuhiro Tanaka0
Osamu Oda0
Tomohiko Shibata0
Yuji Hori0
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Patent abstract
In a semiconductor light-emitting element, an underlayer is composed of a high crystallinity AlN layer having a FWHM in X-ray rocking curve of 90 seconds or below, and a first cladding layer is composed of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer.
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US Patent RE040163 Semiconductor light-emitting element US Patent RE40163 Semiconductor light-emitting element
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Patent Number
RE040163
Patent Number
RE40163
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Official Website
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US Patent RE040163 Semiconductor light-emitting element
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Is a
Current assignee
Patent jurisdiction
Patent number
RE040163
Date of patent
March 25, 2008
Patent application number
11083331
Date Filed
March 17, 2005
Patent primary examiner
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