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G. Nagesh Rao

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Edits on 14 Dec, 2021
"Remove inverse infobox"
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Golden AI
edited on 14 Dec, 2021
Edits made to:
Infobox (-27 properties)
Infobox
Patent primary examiner of
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US Patent 7708832 Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate
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US Patent 7716948 Crucible having a doped upper wall portion and method for making the same
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US Patent 7718000 Method and article of manufacture corresponding to a composite comprised of ultra nonacrystalline diamond, metal, and other nanocarbons useful for thermoelectric and other applications
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US Patent 7727332 Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby
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US Patent 7731796 Nitrogen semiconductor compound and device fabricated using the same
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US Patent 7736433 BaTiO
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US Patent 7741416 Colloidal photonic crystals using colloidal nanoparticles and method for preparation thereof
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US Patent 7745854 Substrate for growing compound semiconductor and epitaxial growth method
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US Patent 7749324 Casting method of silicon ingot and cutting method of the same
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US Patent 7749865 Method for producing semiconductor wafers and a system for determining a cut position in a semiconductor ingot
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US Patent 7754083 Solid hollow fiber cooling crystallization systems and methods
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US Patent 7771531 Manufacturing method and usage of crystallized metal oxide thin film
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US Patent 7771532 Nitride semiconductor substrate and method of producing same
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US Patent 7772585 Nitride semiconductor substrate and method of producing same
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US Patent 7776152 Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growth
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US Patent 7780783 Apparatus and method for producing single crystal, and silicon single crystal
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US Patent 7785414 Process for manufacturing wafer of silicon carbide single crystal
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US Patent 7790636 Simultaneous irradiation of a substrate by multiple radiation sources
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US Patent 7794538 Self-assembly method, opal, photonic band gap, and light source
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US Patent 7794539 Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby
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US Patent 7799133 Crucible apparatus and method of solidifying a molten material
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US Patent 7815733 Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal
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US Patent 7824493 Silicon wafer and method for manufacturing the same
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US Patent 7829134 Method for producing memory having a solid electrolyte material region
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US Patent 7830027 Level realignment following an epitaxy step
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US Patent 7846252 Silicon wafer for IGBT and method for producing same
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US Patent 7863798 Nanocrystal powered nanomotor
Edits on 6 Dec, 2021
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Golden AI
edited on 6 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7863798 Nanocrystal powered nanomotor
Edits on 6 Dec, 2021
Golden AI profile picture
Golden AI
edited on 6 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7846252 Silicon wafer for IGBT and method for producing same
Golden AI profile picture
Golden AI
edited on 6 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7830027 Level realignment following an epitaxy step
Golden AI profile picture
Golden AI
edited on 6 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7829134 Method for producing memory having a solid electrolyte material region
Golden AI profile picture
Golden AI
edited on 6 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7824493 Silicon wafer and method for manufacturing the same
Golden AI profile picture
Golden AI
edited on 6 Dec, 2021
Golden AI profile picture
Golden AI
edited on 5 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7799133 Crucible apparatus and method of solidifying a molten material
Golden AI profile picture
Golden AI
edited on 5 Dec, 2021
Golden AI profile picture
Golden AI
edited on 5 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7794538 Self-assembly method, opal, photonic band gap, and light source
Golden AI profile picture
Golden AI
edited on 5 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7790636 Simultaneous irradiation of a substrate by multiple radiation sources
Golden AI profile picture
Golden AI
edited on 5 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7785414 Process for manufacturing wafer of silicon carbide single crystal
Golden AI profile picture
Golden AI
edited on 5 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7780783 Apparatus and method for producing single crystal, and silicon single crystal
Golden AI profile picture
Golden AI
edited on 5 Dec, 2021
Golden AI profile picture
Golden AI
edited on 5 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7772585 Nitride semiconductor substrate and method of producing same
Golden AI profile picture
Golden AI
edited on 5 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7771532 Nitride semiconductor substrate and method of producing same
Golden AI profile picture
Golden AI
edited on 5 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7771531 Manufacturing method and usage of crystallized metal oxide thin film
Edits on 5 Dec, 2021
Golden AI profile picture
Golden AI
edited on 5 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7754083 Solid hollow fiber cooling crystallization systems and methods
Golden AI profile picture
Golden AI
edited on 5 Dec, 2021
Golden AI profile picture
Golden AI
edited on 5 Dec, 2021
Edits made to:
Infobox (+1 properties)
Infobox
Patent primary examiner of
‌
US Patent 7749324 Casting method of silicon ingot and cutting method of the same

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