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Robert G Bachner
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Edits on 14 Dec, 2021
"Remove inverse infobox"
Golden AI
edited on 14 Dec, 2021
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Infobox
Patent primary examiner of
US Patent 11171046 Methods for forming cobalt and ruthenium capping layers for interconnect structures
US Patent 11171220 Structure and method for high-K metal gate
US Patent 11171233 Vertical field effect transistors (VFETs) with self-aligned wordlines
US Patent 11177126 Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching
US Patent 11183473 Integrated circuit structure having dies with connectors of different sizes
US Patent 11183573 III-nitride field-effect transistor with dual gates
US Patent 11183612 Method for producing at least one optoelectronic component, and optoelectronic component
US Patent 11189545 Semiconductor device and method for manufacturing the same
US Patent 11189749 Transfer apparatus and transfer method for transferring light emitting diode chip
Edits on 2 Dec, 2021
Golden AI
edited on 2 Dec, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent primary examiner of
US Patent 11189749 Transfer apparatus and transfer method for transferring light emitting diode chip
Golden AI
edited on 2 Dec, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent primary examiner of
US Patent 11189545 Semiconductor device and method for manufacturing the same
Edits on 25 Nov, 2021
Golden AI
edited on 25 Nov, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent primary examiner of
US Patent 11183612 Method for producing at least one optoelectronic component, and optoelectronic component
Golden AI
edited on 25 Nov, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent primary examiner of
US Patent 11183573 III-nitride field-effect transistor with dual gates
Golden AI
edited on 25 Nov, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent primary examiner of
US Patent 11183473 Integrated circuit structure having dies with connectors of different sizes
Edits on 19 Nov, 2021
Golden AI
edited on 19 Nov, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent primary examiner of
US Patent 11177126 Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching
Edits on 11 Nov, 2021
Golden AI
edited on 11 Nov, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent primary examiner of
US Patent 11171233 Vertical field effect transistors (VFETs) with self-aligned wordlines
Golden AI
edited on 11 Nov, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent primary examiner of
US Patent 11171220 Structure and method for high-K metal gate
Golden AI
edited on 11 Nov, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent primary examiner of
US Patent 11171046 Methods for forming cobalt and ruthenium capping layers for interconnect structures
"Created via: Entity Importer"
Golden AI
created this topic on 11 Nov, 2021
Edits made to:
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(
+2
properties)
Robert G Bachner
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United States Patent and Trademark Office
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