US Patent 10020223 Reduced tip-to-tip and via pitch at line end

A semiconductor structure and methods of forming the semiconductor structure forming a single damascene line formed of a conductive material in a dielectric layer. The single damascene line is at a thickness equal to a line height and a via height. The single damascene line is subtractively cut and patterned to form a first line including a via at a first line end and a second line including a via at a second line end. The tip-to-tip spacing is minimal and defines via pitch. A conformal conductive metal cap layer including cobalt is deposited onto the first and second lines including the respective vias at the first and second line ends.