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US Patent 10020261 Split rail structures located in adjacent metal layers

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
October 14, 2016
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Date of Patent
July 10, 2018
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Patent Application Number
15294286
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Patent Citations Received
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US Patent 12125852 Multi-gate transistors with backside power rail and reduced gate-drain capacitance
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US Patent 11450665 Semiconductor structure with self-aligned backside power rail
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US Patent 11923408 Semiconductor devices with backside power rail and method thereof
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US Patent 11973128 Methods for forming multi-gate transistors
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US Patent 12021119 Selective liner on backside via and method thereof
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US Patent 11482594 Semiconductor devices with backside power rail and method thereof
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US Patent 11233005 Method for manufacturing an anchor-shaped backside via
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US Patent 11532556 Structure and method for transistors having backside power rails
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US Patent 11631638 Semiconductor structure having an anchor-shaped backside via
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US Patent 11658119 Backside signal interconnection
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•••
Patent Inventor Names
Wei-Chen Chu
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Chia-Tien Wu
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Hsiang-Wei Liu
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10020261
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Patent Primary Examiner
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David Hung Vu
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