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US Patent 10050045 SRAM cell with balanced write port
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Patent
Date Filed
June 16, 2017
Date of Patent
August 14, 2018
Patent Application Number
15625490
Patent Citations Received
US Patent 12082388 Eight-transistor static random access memory, layout thereof, and method for manufacturing the same
0
US Patent 11374088 Leakage reduction in gate-all-around devices
US Patent 11482518 Semiconductor structures having wells with protruding sections for pickup cells
US Patent 10483267 Eight-transistor static random-access memory, layout thereof, and method for manufacturing the same
US Patent 10840251 Memory device and manufacturing method
US Patent 10847214 Low voltage bit-cell
US Patent 10847216 SRAM memory having a reduced leakage current
US Patent 10868003 Creating devices with multiple threshold voltages by cut-metal-gate process
US Patent 10872896 Eight-transistor static random access memory, layout thereof, and method for manufacturing the same
US Patent 11043595 Cut metal gate in memory macro edge and middle strap
•••
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
10050045
Patent Primary Examiner
Bryan Junge
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