Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Sai-Hooi Yeong0
Bo-Yu Lai0
Chi On Chui0
Kai-Hsuan Lee0
Sheng-Chen Wang0
Yen-Ming Chen0
Date of Patent
August 28, 2018
0Patent Application Number
154921670
Date Filed
April 20, 2017
0Patent Citations Received
0
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Patent Primary Examiner
Patent abstract
A method includes forming a metal gate in a first inter-layer dielectric, performing a treatment on the metal gate and the first inter-layer dielectric, selectively growing a hard mask on the metal gate without growing the hard mask from the first inter-layer dielectric, depositing a second inter-layer dielectric over the hard mask and the first inter-layer dielectric, planarizing the second inter-layer dielectric and the hard mask, and forming a gate contact plug penetrating through the hard mask to electrically couple to the metal gate.
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