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US Patent 10087522 Deposition of metal borides

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
April 21, 2016
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Date of Patent
October 2, 2018
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Patent Application Number
15135224
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Patent Citations Received
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US Patent 10914004 Thin-film deposition method and manufacturing method of semiconductor device
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US Patent 11274369 Thin film deposition method
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US Patent 11282698 Method of forming topology-controlled amorphous carbon polymer film
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US Patent 11286562 Gas-phase chemical reactor and method of using same
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US Patent 11286558 Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
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US Patent 11289326 Method for reforming amorphous carbon polymer film
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US Patent D947913 Susceptor shaft
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US Patent 11295980 Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
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US Patent 11296189 Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
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US Patent 10229833 Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
•••
Patent Inventor Names
Eric Shero
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Petri Raisanen
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Robert Brennan Milligan
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Suvi Haukka
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Michael Eugene Givens
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10087522
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Patent Primary Examiner
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Bret P Chen
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