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US Patent 10090161 Plasma etching apparatus and plasma etching method

Patent 10090161 was granted and assigned to Tokyo Electron on October, 2018 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
Current Assignee
Tokyo Electron
Tokyo Electron
Date Filed
January 12, 2017
Date of Patent
October 2, 2018
Patent Applicant
Tokyo Electron
Tokyo Electron
Patent Application Number
15404471
Patent Citations Received
‌
US Patent 11984301 Edge ring, substrate support, substrate processing apparatus and method
0
‌
US Patent 11342163 Variable depth edge ring for etch uniformity control
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10090161
Patent Primary Examiner
‌
Anita K Alanko

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