Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jesmin Haq0
Zhongjian Teng0
Tom Zhong0
Date of Patent
October 16, 2018
0Patent Application Number
154656420
Date Filed
March 22, 2017
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for etching a magnetic tunneling junction (MTJ) structure is described. A stack of MTJ layers on a bottom electrode on a wafer is provided. A hard mask layer is provided on the MTJ stack. The hard mask layer is patterned to form a hard mask. The MTJ stack is patterned to form a MTJ device wherein sidewall damage is formed on sidewalls of the MTJ device. The sidewall damage is removed by applying a CMP slurry which physically attacks and removes the sidewall damage on the MTJ device.
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