US Patent 10103322 Method to remove sidewall damage after MTJ etching
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Patent abstract
A method for etching a magnetic tunneling junction (MTJ) structure is described. A stack of MTJ layers on a bottom electrode on a wafer is provided. A hard mask layer is provided on the MTJ stack. The hard mask layer is patterned to form a hard mask. The MTJ stack is patterned to form a MTJ device wherein sidewall damage is formed on sidewalls of the MTJ device. The sidewall damage is removed by applying a CMP slurry which physically attacks and removes the sidewall damage on the MTJ device.
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Patent Inventor Names
Jesmin Haq0
Tom Zhong0
Zhongjian Teng0
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Patent Jurisdiction
Patent Number
101033220
Date of Patent
October 16, 2018
0Patent Application Number
154656420
Date Filed
March 22, 2017
0Patent Citations Received
Patent Primary Examiner
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US Patent 10103322 Method to remove sidewall damage after MTJ etching
Infobox
Is a
Patent jurisdiction
Patent number
10103322
Date of patent
October 16, 2018
Patent application number
15465642
Date Filed
March 22, 2017
Patent primary examiner
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