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US Patent 10109526 Etch profile control during skip via formation

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
May 31, 2017
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Date of Patent
October 23, 2018
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Patent Application Number
15609408
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Patent Citations Received
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US Patent 12131948 Techniques for void-free material depositions
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US Patent 10600687 Process integration techniques using a carbon layer to form self-aligned structures
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US Patent 11749564 Techniques for void-free material depositions
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US Patent 11315827 Skip via connection between metallization levels
Patent Inventor Names
Shao Beng Law
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Nicholas V. LiCausi
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Ryan S. Smith
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Xunyuan Zhang
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Errol Todd Ryan
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J. Jay McMahon
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10109526
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Patent Primary Examiner
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Mohsen Ahmadi
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