US Patent 10109793 Bottom electrode for RRAM structure

The present disclosure relates to a memory cell having a multi-layer bottom electrode with an insulating core that provides for good gap fill ability, and an associated method of formation. In some embodiments, the memory cell includes a bottom electrode having an insulating material surrounded by a conductive material. A dielectric data storage layer is arranged over the bottom electrode, and a top electrode is arranged over the dielectric data storage layer.