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US Patent 10109793 Bottom electrode for RRAM structure
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Patent
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Date Filed
September 26, 2016
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Date of Patent
October 23, 2018
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Patent Application Number
15275554
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Patent Citations Received
US Patent 11430953 Resistive random access memory device
US Patent 10504963 RRAM memory cell with multiple filaments
US Patent 10516106 Electrode structure to improve RRAM performance
US Patent 10680038 RRAM memory cell with multiple filaments
US Patent 11329221 Electrode structure to improve RRAM performance
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Patent Inventor Names
Yu-Wen Liao
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Jen-Sheng Yang
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Wen-Ting Chu
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10109793
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Patent Primary Examiner
Ngan Ngo
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