Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tatsunori Isogai0
Date of Patent
November 27, 2018
0Patent Application Number
154634460
Date Filed
March 20, 2017
0Patent Citations Received
Patent Primary Examiner
Patent abstract
In a manufacturing method of a semiconductor device according to an embodiment, an oxide film is formed on a semiconductor layer containing an impurity. A heat treatment is performed on the semiconductor layer to diffuse part of the impurity into the oxide film with hydrogen plasma treatment on the oxide film or with ultraviolet irradiation on the oxide film. After the heat treatment, the oxide film is removed.
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