US Patent 10141190 Manufacturing method of a semiconductor device
Patent 10141190 was granted and assigned to Toshiba Memory Corporation on November, 2018 by the United States Patent and Trademark Office.
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Patent abstract
In a manufacturing method of a semiconductor device according to an embodiment, an oxide film is formed on a semiconductor layer containing an impurity. A heat treatment is performed on the semiconductor layer to diffuse part of the impurity into the oxide film with hydrogen plasma treatment on the oxide film or with ultraviolet irradiation on the oxide film. After the heat treatment, the oxide film is removed.
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Patent Inventor Names
Tatsunori Isogai0
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Patent Number
101411900
Date of Patent
November 27, 2018
0Patent Application Number
154634460
Date Filed
March 20, 2017
0Patent Citations Received
Patent Primary Examiner
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US Patent 10141190 Manufacturing method of a semiconductor device
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
10141190
Date of patent
November 27, 2018
Patent application number
15463446
Date Filed
March 20, 2017
Patent primary examiner
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