Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chih-Hung Hsieh0
Date of Patent
December 18, 2018
0Patent Application Number
154287980
Date Filed
February 9, 2017
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device includes first and second FETs including first and second channel regions, respectively. The first and second FETs include first and second gate structures, respectively. The first and second gate structures include first and second gate dielectric layers formed over the first and second channel regions and first and second gate electrode layers formed over the first and second gate dielectric layers. The first and second gate structures are aligned along a first direction. The first gate structure and the second gate structure are separated by a separation plug made of an insulating material. The first gate electrode layer is in contact with a side wall of the separation plug.
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