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Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
December 13, 2022
Patent Application Number
17078655
Date Filed
October 23, 2020
Patent Primary Examiner
A method includes depositing a first work function tuning layer over a gate dielectric layer using an atomic layer deposition process. The atomic layer deposition process comprises depositing one or more first nitride monolayers; and depositing one or more carbide monolayers over the one or more first nitride monolayers. The method further includes depositing an adhesion layer of the first work function tuning layer; and depositing a conductive material over the adhesion layer.
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