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US Patent 10157746 Semiconductor device and manufacturing method thereof

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
February 9, 2017
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Date of Patent
December 18, 2018
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Patent Application Number
15428798
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Patent Citations Received
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US Patent 11527621 Gate electrode deposition and structure formed thereby
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US Patent 10896955 Semiconductor device including a functional layer and a method of fabricating the same
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US Patent 11031501 Isolation structure having different distances to adjacent FinFET devices
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US Patent 11245018 Semiconductor device including a gate structure with a wider end portion than a linear portion
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US Patent 11699758 Isolation structure having different distances to adjacent FinFET devices
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US Patent 11075082 Semiconductor device and manufacturing method thereof
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US Patent 10510894 Isolation structure having different distances to adjacent FinFET devices
Patent Inventor Names
Chih-Hung Hsieh
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10157746
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Patent Primary Examiner
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Mary Wilczewski
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