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US Patent 10164182 Switching layer scheme to enhance RRAM performance

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
June 26, 2017
Date of Patent
December 25, 2018
Patent Application Number
15633101
Patent Citations Received
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US Patent 12082421 Semiconductor device and method for manufacturing the same
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US Patent 10840432 Semiconductor device and method for fabricating the same
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US Patent 11289650 Stacked access device and resistive memory
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US Patent 11683999 Switching layer scheme to enhance RRAM performance
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US Patent 11706930 Semiconductor device and method for manufacturing the same
0
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US Patent 11362271 Switching layer scheme to enhance RRAM performance
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US Patent 11430946 Semiconductor device and method for fabricating the same
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US Patent 12069971 Switching layer scheme to enhance RRAM performance
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US Patent 10468099 Circuit structure and driving method thereof, chip and authentication method thereof, and electronic device
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US Patent 10505107 Switching layer scheme to enhance RRAM performance
•••
Patent Inventor Names
Cheng-Yuan Tsai
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Hsing-Lien Lin
0
Wen-Ting Chu
0
Hai-Dang Trinh
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10164182
Patent Primary Examiner
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Nicholas Tobergte

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