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Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tsung-Han Yang0
Deqi Wang0
Gang Liu0
John W. Griswold0
Anand Chandrashekar0
Date of Patent
February 19, 2019
Patent Application Number
15384175
Date Filed
December 19, 2016
Patent Citations Received
...
Patent Primary Examiner
Patent abstract
The methods, systems and apparatus described herein relate to chamber conditioning for remote plasma processes, in particular remote nitrogen-based plasma processes. Certain implementations of the disclosure relate to remote plasma inhibition processes for feature fill that include chamber conditioning. Embodiments of the disclosure relate to exposing remote plasma processing chambers to fluorine species prior to nitrogen-based remote plasma processing of substrates such as semiconductor wafers. Within-wafer uniformity and wafer-to-wafer uniformity is improved.
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