Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Anand Chandrashekar0
Deqi Wang0
Esther Jeng0
Juwen Gao0
Michal Danek0
Raashina Humayun0
Date of Patent
July 27, 2021
0Patent Application Number
161240500
Date Filed
September 6, 2018
0Patent Citations
...
Patent Citations Received
Patent Primary Examiner
Patent abstract
Described herein are methods of filling features with tungsten and related systems and apparatus. The methods include inside-out fill techniques as well as conformal deposition in features. Inside-out fill techniques can include selective deposition on etched tungsten layers in features. Conformal and non-conformal etch techniques can be used according to various implementations. The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as vertical NAND (VNAND) word lines. Examples of applications include logic and memory contact fill, DRAM buried word line fill, vertically integrated memory gate/word line fill, and 3-D integration with through-silicon vias (TSVs).
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