Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 16, 2019
Patent Application Number
15811164
Date Filed
November 13, 2017
Patent Citations Received
Patent Primary Examiner
Patent abstract
An nFET vertical transistor is provided in which a p-doped top source/drain structure is formed in contact with an n-doped semiconductor region that is present on a topmost surface of a vertical nFET channel. The p-doped top source/drain structure is formed utilizing a low temperature (550° C. or less) epitaxial growth process.
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