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US Patent 11908907 VFET contact formation

Overview Structured Data Issues Contributors Activity

Is a

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Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Ruilong Xie0

Heng Wu0

Tian Shen0

Kai Zhao0

Date of Patent

February 20, 2024

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Patent Application Number

171188530

Date Filed

December 11, 2020

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Patent Citations

US Patent 8039893 CMOS inverter coupling circuit comprising vertical transistors

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US Patent 10262904 Vertical transistor top epitaxy source/drain and contact structure

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US Patent 7683428 Vertical Fin-FET MOS devices

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US Patent 9177810 Dual silicide regions and method for forming the same

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Patent Primary Examiner

Michael M Trinh

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CPC Code

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Patent abstract

An embodiment of the invention may include a Vertical Field Effect Transistor (VFET) structure, and method of making that structure, having a first VFET and a second VFET. The first VFET may include a single liner between a first source/drain epi and a contact. The second VFET may include two liners between a second source/drain epi and a contact. This may enable proper contact liner matching for differing VFET devices.

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