US Patent 11908907 VFET contact formation
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US Patent 11908907 VFET contact formation
Article
Patent abstract
An embodiment of the invention may include a Vertical Field Effect Transistor (VFET) structure, and method of making that structure, having a first VFET and a second VFET. The first VFET may include a single liner between a first source/drain epi and a contact. The second VFET may include two liners between a second source/drain epi and a contact. This may enable proper contact liner matching for differing VFET devices.
Infobox
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Patent Jurisdiction
Patent Number
Patent Inventor Names
Heng Wu0
Kai Zhao0
Ruilong Xie0
Tian Shen0
Date of Patent
February 20, 2024
0Patent Application Number
171188530
Date Filed
December 11, 2020
0Patent Citations
Patent Primary Examiner
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