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US Patent 11908907 VFET contact formation

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
December 11, 2020
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Date of Patent
February 20, 2024
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Patent Application Number
17118853
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Patent Citations
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US Patent 8039893 CMOS inverter coupling circuit comprising vertical transistors
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US Patent 10262904 Vertical transistor top epitaxy source/drain and contact structure
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US Patent 7683428 Vertical Fin-FET MOS devices
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US Patent 9177810 Dual silicide regions and method for forming the same
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Patent Inventor Names
Ruilong Xie
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Heng Wu
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Tian Shen
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Kai Zhao
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11908907
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Patent Primary Examiner
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Michael M Trinh
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CPC Code
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H01L 29/66666
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H01L 29/41741
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H01L 29/45
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H01L 21/823487
0
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H01L 21/823475
0
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H01L 21/823418
0
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H01L 27/088
0
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H01L 27/11556
0
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H01L 27/11582
0
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H01L 29/7827
0
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