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US Patent 10269715 Split rail structures located in adjacent metal layers

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
June 28, 2018
Date of Patent
April 23, 2019
Patent Application Number
16022131
Patent Citations Received
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US Patent 12125852 Multi-gate transistors with backside power rail and reduced gate-drain capacitance
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US Patent 12021119 Selective liner on backside via and method thereof
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US Patent 11482594 Semiconductor devices with backside power rail and method thereof
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US Patent 11233005 Method for manufacturing an anchor-shaped backside via
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US Patent 11532556 Structure and method for transistors having backside power rails
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US Patent 11631638 Semiconductor structure having an anchor-shaped backside via
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US Patent 11658119 Backside signal interconnection
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US Patent 11670692 Gate-all-around devices having self-aligned capping between channel and backside power rail
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US Patent 11342413 Selective liner on backside via and method thereof
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US Patent 11784228 Process and structure for source/drain contacts
•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10269715
Patent Primary Examiner
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Hung K Vu

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