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US Patent 10276442 Wrap-around contacts formed with multiple silicide layers

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
May 30, 2018
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Date of Patent
April 30, 2019
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Patent Application Number
15993017
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Patent Citations Received
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US Patent 11424367 Wrap-around contacts including localized metal silicide
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US Patent 10546957 Nanosheet FET including all-around source/drain contact
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US Patent 11569361 Nanosheet transistors with wrap around contact
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US Patent 10832954 Forming a reliable wrap-around contact without source/drain sacrificial regions
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US Patent 11011643 Nanosheet FET including encapsulated all-around source/drain contact
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US Patent 11295983 Transistor having source or drain formation assistance regions with improved bottom isolation
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US Patent 11398480 Transistor having forked nanosheets with wraparound contacts
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US Patent 11508823 Low capacitance low RC wrap-around-contact
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Patent Inventor Names
Nicolas Loubet
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Julien Frougier
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Kangguo Cheng
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Ruilong Xie
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Adra Carr
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10276442
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Patent Primary Examiner
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Luan C Thai
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