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US Patent 10283600 Integrated circuit device

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
January 15, 2018
Date of Patent
May 7, 2019
Patent Application Number
15871628
Patent Citations Received
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US Patent 11637186 Field effect transistor having gate contact and source/drain contact separated by a gap
0
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US Patent 11551969 Integrated circuit structure with backside interconnection structure having air gap
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US Patent 11984350 Integrated circuit structure with backside interconnection structure having air gap
0
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US Patent 11646346 Contact structure with air spacer for semiconductor device and method for forming the same
0
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US Patent 10453934 Vertical transport FET devices having air gap top spacer
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10283600
Patent Primary Examiner
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Hung K Vu

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