Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Li-Zhen Yu0
Chih-Hao Wang0
Lin-Yu Huang0
Huan-Chieh Su0
Cheng-Chi Chuang0
Date of Patent
May 14, 2024
0Patent Application Number
180660710
Date Filed
December 14, 2022
0Patent Citations
0
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Patent Primary Examiner
Patent abstract
A method includes forming a transistor over a substrate; forming a front-side interconnection structure over the transistor; after forming the front-side interconnection structure, removing the substrate; after removing the substrate, forming a backside via to be electrically connected to the transistor; depositing a dielectric layer to cover the backside via; forming an opening in the dielectric layer to expose the backside via; forming a spacer structure on a sidewall of the opening; after forming a spacer structure, forming a conductive feature in the opening to be electrically connected to the backside via; and after forming the conductive feature, forming an air gap in the spacer structure.
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